Broadband GaN Transistors Power EW, Tactical Radios

These half-dozen new RF power transistors are extremely rugged and reliable, with generous output-power levels over broad bandwidths—ideal for demanding battlefield requirements.

Six new GaN transistors include drivers and output-stage devices for battlefield applications from 1 to 3,000 MHz.

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2016-05-13T14:16:21-04:00May 13th, 2016|Microwaves & RF|