GaN on SiC RF power transistors complement LDMOS

2016-11-29T16:26:14-04:00May 17th, 2016|Microwave Engineering Europe|






A second generation of 50-V 0.5-μm GaN on SiC RF power transistors from Ampleon, dedicated to mobile broadband applications, provides a 5 percent improvement in power efficiency compared to LDMOS-based devices.

The GaN on SiC RF power transistors enabe high-power multiband applications while offering a size reduction in the order of 30 to 50 percent, when compared to similar LDMOS transistors. PA designers can now more easily find the perfect fit for each particular set of requirements, be it efficiency, size, power and cost.

The latest portfolio will include transistors with 15 to 600-W of peak power for all major cellular bands between 1.8 and 3.8 GHz.

The CLF2H27LS-140 is a single-ended transistor providing 140-W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2 GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8 GHz applications with 140- and 40-W outputs at P3dB.

The family is ideal for RF PA designers developing high efficiency or multiband Doherty power amplifiers for use in wireless infrastructure networks.

Comprehensive application support, including ready-to-go Doherty reference designs optimized for mass-production, is available.

www.ampleon.com

MAY/JUNE 2016

2016-11-29T16:26:14-04:00May 17th, 2016|Microwave Engineering Europe|

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Comment : Managing IoT data is the challenge of the decade

News : Fast flexible silicon transistor with wireless capabilities-Graphene as filter for future THz wireless devices-Protection from electromagnetic fields-Test challenges of modern day networks

Antennas : Cutting antenna design time – algorithm streamlines 4G/5G-On-chip RF circulator doubles Wi-Fi speeds with a single antenna

EDA : Designing with enhanced load pull measurements for base station power amplifiers

New  Products : PIN diode switches cover 10 MHz to 67 GHz-High power spiral antennas

Brief: 

Comment : Managing IoT data is the challenge of the decade

News : Fast flexible silicon transistor with wireless capabilities-Graphene as filter for future THz wireless devices-Protection from electromagnetic fields-Test challenges of modern day networks

Antennas : Cutting antenna design time – algorithm streamlines 4G/5G-On-chip RF circulator doubles Wi-Fi speeds with a single antenna

EDA : Designing with enhanced load pull measurements for base station power amplifiers

New  Products : PIN diode switches cover 10 MHz to 67 GHz-High power spiral antennas

Silicon Labs: Developing Beacons with Bluetooth Low Energy Technology

2016-11-29T16:26:21-04:00May 17th, 2016|Microwave Engineering Europe|






Beacons enable “proximity-aware applications” for customers, businesses, and industrial environments. Putting beacons on a product, pushing their data into the cloud, and then using it to create value all represent new and challenging development frontiers for many of us. So, how can you develop beacons? Download this white paper to learn more about:

  • Beacon Application Examples
  • A History of Bluetooth Low Energy and Beacons
  • Example Code and Tools to Develop Beacons
  • End-to-end Beacon Solutions
Beacon