MACOM Achieves Breakthrough for RF Energy Applications with 300 W Plastic-packaged GaN Transistor

2016-11-29T16:26:13-04:00May 17th, 2016|Microwave Journal|

300 W GaN AmpMACOM today announced a 300 W GaN on Silicon rugged power transistor in cost effective plastic packaging optimized for use in commercial scale solid-state RF energy applications. Based on MACOM’s Gen4 GaN technology, the new MAGe-102425-300 delivers performance that exceeds LDMOS at an equivalent price profile at scaled volume production levels.